Realization with Fabrication of Double-Gate MOSFET Based Class-AB Amplifier

  • VIRANJAY SRIVASTAVA University of KwaZulu-Natal
  • Suvashan Pillay Department of Electronic Engineering, Howard College, University of KwaZulu-Natal, Durban - 4041, South Africa.
Keywords: microelectronics, vlsi, transistor, low power device, gate engineering


This research work designs the class-AB amplifier with the application of double-gate (DG) MOSFET, which provides insight on the MOSFET and how the amplifier can be utilized, in accordance with its future design. Here main consideration is the use of DG MOSFET in audio amplifier design, for its low power and low noise application, reducing the need for filter design to reduce low and high frequency noise, voltage regulation for high-to-low power, etc. The challenge of this design is an attempt in making the DG MOSFET a prominent component, to demonstrate it as a usable MOSFET in a common electronic application. Design a class-AB amplifier model using the double-gate MOSFET, which is yet to be implemented in the scientific community and providing an application of the model in audio amplifier have been designed by analysing its frequency and power characteristics. This proposed design with 2 Wrms audio amplifier drives a nominal 8 Ω load by a 100 mVrms input signal, for the typical audio frequency range of 20 Hz – 20 kHz.