Realization with Fabrication of Double-Gate MOSFET Based Third Order High Pass Filter
This research work designs a third order high pass filter with the replacement of traditional MOSFET and amplifiers with Double-Gate (DG) MOSFET. A theoretical background for the fundamental concepts involved has been analysed. A mathematical analysis of circuit designs based on the fundamental concepts has conducted, simulated and finally fabricated. The objective of this research work is to improve the filter specifications via application of DG MOSFETs. The system is to be designed for corner frequency fc = 10 kHz, the gain >= unity. The components in the stopband (f < 0.01fc) have at least -20 dB attenuation with the bandwidth greater than 1.5 MHz.